| PART |
Description |
Maker |
| HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
256 MB 32M x 72 PC2100 Registered DIM...
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank
Registered DDR SDRAM-Modules
Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
| HYS72D64020GR-8-A HYS72D128020GR-7-A HYS72D128020G |
Cable Termination Tool; For Use With:MediaFlex and Interface Outlets, GigaFlex Modules; Connector Type:Modular RoHS Compliant: NA
TESTPOINT PIN RECEPTACLE
Connectors, PCB header and jumpers Multipole RoHS Compliant: Yes
CONNECTORS, PCB RoHS Compliant: Yes
2.5 V 184-pin Registered DDR-I SDRAM Modules
512 MB 64M x 72 PC2100 Registered DIM...
256 MB 32M x 72 PC1600 Registered DIM...
512 MB 64M x 72 PC1600 Registered DIM...
1 GB 128M x 72 PC2100 Registered DIMM...
256 MB 32M x 72 PC2100 Registered DIM...
1 GB 128M x 72 PC1600 Registered DIMM...
|
INFINEON[Infineon Technologies AG]
|
| K8D6316UBM-LC09 K8D6316UBM-LI09 K8D6316UBM-PI07 K8 |
64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M5M4V64S40ATP-10L M5M4V64S40ATP-8 M5M4V64S40ATP-8A |
64M (4-BANK x 1048576-WORD x 16-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| M5M4V64S20ATP-12 M5M4V64S20ATP-8 |
64M (4-BANK x 4194304-WORD x 4-BIT) Synchronous DRAM
|
Mitsubishi Electric Corporation
|
| K5C6417YTM/K5C6417YBM |
64M Bit (4Mx16) Four Bank NOR Flash Memory Data Sheet
|
Samsung Electronic
|
| EBE51RD8ABFA-5C-E EBE51RD8ABFA EBE51RD8ABFA-4A-E |
512MB Registered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| IBM13M8734HCD |
8M x 72 1 Bank Registered/Buffered SDRAM Module(8M x 72 1组寄缓冲同步动态RAM模块) 8米72 1银行注册/缓冲内存模组米72 1组寄缓冲同步动态内存模块）
|
International Business Machines, Corp.
|
| V437464C24V |
3.3 VOLT 64M x 72 HIGH PERFORMANCE PC133 REGISTERED PLL ECC SDRAM MODULE
|
Mosel Vitelic, Corp
|
| HYMP264R72L4-Y5 HYMP264R72L4-E3 HYMP264R72L4-Y6 HY |
64M X 72 DDR DRAM MODULE, 0.5 ns, DMA240
DDR2 SDRAM - Registered DIMM 512MB
|
HYNIX SEMICONDUCTOR INC
|
| M2V64S20BTP-6 M2V64S20TP M2V64S30BTP-6 M2V64S30TP |
From old datasheet system
4-BANK x 2097152-WORD x 8-BIT
64M bit Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HM5425161BTT-10 HM5425401BTT-10 HM5425801BTT-10 HM |
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 16M X 16 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 64M X 4 DDR DRAM, 0.75 ns, PDSO66
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank 256M SSTL_2 DDR SDRAM的接43 MHz/133 MHz/125 MHz/100 MHz Mword6位-bank/8-Mword位银行/ 16 Mword位 -银行
256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank
|
Elpida Memory, Inc.
|
